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Alliance Semiconductor Corporation
Alliance Semiconductor Corporation

AS7C33512NTD18A Datasheet Preview

AS7C33512NTD18A Datasheet

3.3V 512K x 18 Pipelined burst Synchronous SRAM

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AS7C33512NTD18A pdf
November 2004
AS7C33512NTD18A
®
3.3V 512K × 18 Pipelined burst Synchronous SRAM with NTDTM
Features
• Organization: 524,288 words × 18 bits
• NTDarchitecture for efficient bus operation
• Fast clock speeds to 166 MHz
• Fast clock to data access: 3.5/4.0 ns
• Fast OE access time: 3.5/4.0 ns
www.DataSheet4FUu.clolym synchronous operation
• Common data inputs and data outputs
• Asynchronous output enable control
• Available in100-pin TQFP
Logic block diagram
A[18:0]
19
CE0
CE1
CE2
R/W
BWa
BWb
ADV/LD
LBO
ZZ
D Address Q
register
Burst logic
CLK
Cloongtircol
CLK
DQ [a:b]
18
D
Data
Input
Q
Register
CLK
CLK
CEN
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Self-timed WRITE cycles
• “Interleaved” or “Linear burst” modes
• Snooze mode for standby operation
19
DQ
Write delay
addr. registers
CLK
19
CLK
512K x 18
SRAM
Array
18
18 18
18
CLK
Output
OE Register
18
OE DQ[a:b]
Selection Guide
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
-166
6
166
3.5
475
130
30
11/30/04; v.2.1
Alliance Semiconductor
–133
7.5
133
4
400
100
30
Units
ns
MHz
ns
mA
mA
mA
1 of 19
Copyright © Alliance Semiconductor. All rights reserved.



Alliance Semiconductor Corporation
Alliance Semiconductor Corporation

AS7C33512NTD18A Datasheet Preview

AS7C33512NTD18A Datasheet

3.3V 512K x 18 Pipelined burst Synchronous SRAM

No Preview Available !

AS7C33512NTD18A pdf
8 Mb Synchronous SRAM products list1,2
Org Part Number
512KX18
AS7C33512PFS18A
256KX32
AS7C33256PFS32A
256KX36
AS7C33256PFS36A
512KX18
AS7C33512PFD18A
256KX32
AS7C33256PFD32A
256KX36
AS7C33256PFD36A
512KX18
AS7C33512FT18A
www.DataSheet4U.co2m56KX32
AS7C33256FT32A
256KX36
AS7C33256FT36A
512KX18
AS7C33512NTD18A
256KX32
AS7C33256NTD32A
256KX36
AS7C33256NTD36A
512KX18
AS7C33512NTF18A
256KX32
AS7C33256NTF32A
256KX36
AS7C33256NTF36A
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
®
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT : Flow-through Burst Synchronous SRAM
NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM
NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM
AS7C33512NTD18A
Speed
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
166/133 MHz
166/133 MHz
166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
11/30/04; v.2.1
Alliance Semiconductor
2 of 19


Part Number AS7C33512NTD18A
Description 3.3V 512K x 18 Pipelined burst Synchronous SRAM
Maker Alliance Semiconductor Corporation
Total Page 19 Pages
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Alliance Semiconductor Corporation
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