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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB14N50 Datasheet Preview

AOB14N50 Datasheet

14A N-Channel MOSFET

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AOB14N50 pdf
AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
General Description
Product Summary
The AOT14N50 &AOB14N50 & AOTF14N50 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT14N50L & AOTF14N50L & AOB14N50L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
600V@150
14A
< 0.38
D
G
AOT14N50
DS
G AOTF14N50
S
GD
AOB14N50 G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT14N50/AOB14N50 AOTF14N50
Drain-Source Voltage
VDS
500
Gate-Source Voltage VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
14
11
56
6
540
1080
5
14*
11*
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
50
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT14N50/AOB14N50
65
0.5
AOTF14N50
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.45
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev6: Jul 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB14N50 Datasheet Preview

AOB14N50 Datasheet

14A N-Channel MOSFET

No Preview Available !

AOB14N50 pdf
AOT14N50/AOB14N50/AOTF14N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
600
V
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
0.5 V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V ID=250µA
Static Drain-Source On-Resistance VGS=10V, ID=7A
Forward Transconductance
VDS=40V, ID=7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.3 4.2 4.5
V
0.29 0.38
20 S
0.71 1
V
14 A
56 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1531
153
11
1.75
1914
191
16
3.5
2297
229
20
5.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=14A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=14A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=14A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V
42.8 51
9.3 11
20.3 24
44 53
84 101
92 110
50 60
289 347
4.93 6
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=6A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev6: Jul 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOB14N50
Description 14A N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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