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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB290L Datasheet Preview

AOB290L Datasheet

100V N-Channel MOSFET

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AOB290L pdf
AOT290L/AOB290L
100V N-Channel MOSFET
General Description
Product Summary
The AOT290L/AOB290L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power
losses are minimized due to an extremely low combination
of RDS(ON) and Crss.In addition, switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
100V
140A
< 3.5m
(< 3.2m)
Top View
D
TO220
View
Bottom
D
Top View
TO-263
D2PAK
Bottom View
D
D
G DS
S DG
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
100
±20
140
110
500
18
15
100
500
500
250
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
0.25
Max
15
60
0.3
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev3 : Sep 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB290L Datasheet Preview

AOB290L Datasheet

100V N-Channel MOSFET

No Preview Available !

AOB290L pdf
AOT290L/AOB290L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2.9 3.5 4.1 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
A
VGS=10V, ID=20A
2.7 3.5
RDS(ON) Static Drain-Source On-Resistance
TO220
VGS=10V, ID=20A
TJ=125°C
4.4 5.7
m
TO263
2.5 3.2
gFS Forward Transconductance
VDS=5V, ID=20A
50 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.67
1
140
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
7180
2780
42
1.7
9550
3700
72
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
90 126 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
33 nC
Qgd Gate Drain Charge
21 nC
tD(on)
Turn-On DelayTime
31 69 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5,
24 53 ns
tD(off)
Turn-Off DelayTime
RGEN=3
45 99 ns
tf Turn-Off Fall Time
27 60 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
65 91 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
460 644 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the P CB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3 : Sep 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOB290L
Description 100V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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