http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4136 Datasheet Preview

AOD4136 Datasheet

POWER Transistor

No Preview Available !

AOD4136 pdf
AOD4136
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD4136 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for both DC-DC and load
switch applications.
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK Bottom View
VDS (V) = 25V
ID = 25A
(VGS = 10V)
RDS(ON) < 11m(VGS = 10V)
RDS(ON) <19m(VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
Maximum
25
±20
25
20
100
17
15
30
15
2.1
1.3
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case F
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
50
4
Max
25
60
5
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4136 Datasheet Preview

AOD4136 Datasheet

POWER Transistor

No Preview Available !

AOD4136 pdf
AOD4136
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=25V, VGS=0V
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=15A
TJ=55°C
TJ=125°C
25
1.5
100
V
10
µA
100
±100 nA
1.9 2.5
V
A
9 11
13 16 m
15 19
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
32
0.71 1
S
V
IS Maximum Body-Diode Continuous Current
20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=12.5V, f=1MHz
734 pF
174 pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
97 pF
2.4 3.6 5.4
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
12.9 16.8 nC
Qg (4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V,
ID=20A
6.2 8.1 nC
2.2 nC
Qgd Gate Drain Charge
4 nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V, RL=0.5,
RGEN=3
6
11.2
19.6
ns
ns
ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
9.6 ns
12 16 ns
11 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the deviceTmBoDunted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
TBD
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4136
Description POWER Transistor
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
PDF Download
AOD4136 pdf
Download PDF File
AOD4136 pdf
View for Mobile






Related Datasheet

1 AOD413 P-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD413 pdf
2 AOD413 P-Channel 40-V (D-S) MOSFET Freescale
Freescale
AOD413 pdf
3 AOD4130 60V N-Channel MOSFET Freescale
Freescale
AOD4130 pdf
4 AOD4130 60V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4130 pdf
5 AOD4132 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4132 pdf
6 AOD4132 N-Channel Enhancement Mode Field Effect Transistor Freescale
Freescale
AOD4132 pdf
7 AOD4136 POWER Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4136 pdf
8 AOD4136 POWER Transistor Freescale
Freescale
AOD4136 pdf
9 AOD413A 40V P-Channel MOSFET Freescale
Freescale
AOD413A pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components