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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD472A Datasheet Preview

AOD472A Datasheet

POWER Transistor

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AOD472A pdf
AOD472A
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD472A/L is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
AOD472A and AOD472AL are electrically identical.
-RoHS Compliant
-AOD472AL is Halogen Free
VDS (V) = 25V
ID = 55A
RDS(ON) < 5.5m
RDS(ON) < 9.5m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% R g Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
Pulsed Drain Current C
TC=25°C
TC=100°C
Pulsed Forward Diode CurrentC
Avalanche Current C
Repetitive avalanche energy L=50uH C
ID
IDM
ISM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
25
±20
55
43
100
100
50
63
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Maximum Junction-to-TAB B
t 10s
Steady-State
Steady-State
Steady-State
Symbol
RθJA
RθJC
RθJC-TAB
Typ
15
41
2.1
2.4
S
Max
20
50
3
3.4
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD472A Datasheet Preview

AOD472A Datasheet

POWER Transistor

No Preview Available !

AOD472A pdf
AOD472A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=25V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=30A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=30A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=12.5V, ID=30A
VGS=10V, VDS=12.5V, RL=0.42,
RGEN=3
IF=30A, dI/dt=500A/µs
IF=30A, dI/dt=500A/µs
Min
25
1.2
100
1500
340
200
1.1
25
12
3.5
6.5
9.5
17
Typ
2
4.4
6.6
7.8
65
0.7
1800
445
285
1.6
31
15
4.8
8.9
8
10.4
29
9
12
21
Max
10
50
100
2.5
5.5
8.2
9.5
1
50
2200
580
400
2.4
40
20
7
13
15
26
Units
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1 : Nov. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD472A
Description POWER Transistor
Maker Alpha & Omega Semiconductors
Total Page 7 Pages
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