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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD5N40 Datasheet Preview

AOD5N40 Datasheet

4.2A N-Channel MOSFET

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AOD5N40 pdf
AOD5N40/AOI5N40
400V,4.2A N-Channel MOSFET
General Description
Product Summary
The AOD5N40 & AOI5N40 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
500V@150
4.2A
< 1.6
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
S
G
AOD5N40
G
S
S
D
G
AOI5N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
400
±30
4.2
2.8
10
1.7
43
86
5
78
0.63
-50 to 150
300
G
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
38
-
1.33
Maximum
55
0.5
1.6
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Jan 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD5N40 Datasheet Preview

AOD5N40 Datasheet

4.2A N-Channel MOSFET

No Preview Available !

AOD5N40 pdf
AOD5N40/AOI5N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS Forward Transconductance
VDS=40V, ID=1A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
400
500
V
0.4 V/ oC
1
µA
10
±100 nΑ
3.4 4 4.5 V
1.25 1.6
5S
0.77 1
V
4.2 A
10 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
260 331 400
25 42 60
1.5 3 5.5
246
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=320V, ID=4.2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=200V, ID=4.2A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4.2A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=4.2A,dI/dt=100A/µs,VDS=100V
5.5 6.9 8.5
1.5 2.0 2.5
1 2.3 3.5
16.5
15
24
11.5
125 160 200
0.7 0.93 1.2
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.7A, VDD=150V, RG=10, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Jan 2012
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOD5N40
Description 4.2A N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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