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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOT2618L Datasheet Preview

AOT2618L Datasheet

60V N-Channel MOSFET

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AOT2618L pdf
AOT2618L/AOB2618L/AOTF2618L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2618L & AOB2618L & AOTF2618L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss.
This device
is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
60V
23A
< 19m
< 25m
D
AOT2618L
DS
G
AOTF2618L
S
GD
G
AOB2618L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2618L/AOB2618L
AOTF2618L
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
23
18
70
22
16
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
7
5.5
23
26
TC=25°C
Power Dissipation B TC=100°C
PD
41.5
20.5
23.5
11.5
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2618L/AOB2618L
15
60
3.6
AOTF2618L
15
60
6.4
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : July 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOT2618L Datasheet Preview

AOT2618L Datasheet

60V N-Channel MOSFET

No Preview Available !

AOT2618L pdf
AOT2618L/AOB2618L/AOTF2618L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=60V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
60
1.4
70
1.95
15.8
29.3
19.5
45
0.72
1
5
±100
2.5
19
35.5
25
1
23
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
950 pF
108 pF
7 pF
12
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14 20 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
6 10 nC
3 nC
Qgd Gate Drain Charge
1.6 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5,
31
ns
tD(off)
Turn-Off DelayTime
RGEN=3
18 ns
tf Turn-Off Fall Time
40 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
20 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
70 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : July 2012
www.aosmd.com
Page 2 of 7
Free Datasheet http://www.datasheet4u.com/


Part Number AOT2618L
Description 60V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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