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Austin Semiconductor
Austin Semiconductor

MT5C1008LL Datasheet Preview

MT5C1008LL Datasheet

128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER

No Preview Available !

MT5C1008LL pdf
Austin Semiconductor, Inc.
SRAM
MT5C1008(LL)
Ultra Low Power
128K x 8 SRAM
WITH DUAL CHIP ENABLE
ULTRA LOW POWER
AVAILABLE AS MILITARY
SPECIFICATIONS
•MIL-STD-883, para. 1.2.2 compliant
FEATURES
• High Speed: 30 ns
• Low active power: 715 mW worst case
• Low CMOS standby power: 3.3 mW worst case
• 2.0V data retention, Ultra Low 0.3mW worst
case power dissipation
• Battery backup applications
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1\, CE2, and OE\ options
www.DataSheet4U.com
OPTIONS
• Timing
30ns access
MARKING
-30
• Package(s)
Ceramic DIP (400 mil)
C No. 111
Temperature
Military (-55°C to +125°C)
MIL
Options
2V data retention/very low power LL
For more products and information
please visit our web site at
www.austinsemiconductor.com
PIN ASSIGNMENT
(Top View)
32-Pin DIP (C)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 CE2
29 WE\
28 A13
26 A8
27 A9
25 A11
24 OE\
23 A10
22 CE1\
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
GENERAL DESCRIPTION
The MT5C1008 SRAM is a high-performance CMOS
static RAM organized as 131, 072 words by 8 bits, offering low
active power and ultra low standby and data retention current
levels. Easy memory expansion is provided by an active LOW
Chip Enable (CE1\), an active HIGH Chip Enable (CE2), and
active Low Output Enable (OE\), and three-state drivers.
Writing to the device is accomplished by taking Chip Enable
One (CE1\) and Write Enable (WE\) inputs LOW and Chip
Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0
through I/O7) is then written into the location specified on the
address pins (A0 through A16).
Reading from the device is accomplished by taking
Chip Enable One (CE1\) and Output Enable (OE\) LOW while
forcing Write Enable (WE\) and Chip Enable Two (CE2) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output (I/O0 through I/O7) are placed
in a high-impedance state when the device is deselected (CE1\)
HIGH or CE2 LOW), the outputs are disabled (OE\ HIGH), or
during a write operation (CE1\ LOW, CE2 HIGH, and WE\ LOW).
MT5C1008(LL)
Rev. 1.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1



Austin Semiconductor
Austin Semiconductor

MT5C1008LL Datasheet Preview

MT5C1008LL Datasheet

128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER

No Preview Available !

MT5C1008LL pdf
Austin Semiconductor, Inc.
SRAM
MT5C1008(LL)
Ultra Low Power
FUNCTIONAL BLOCK DIAGRAM
TRUTH TABLE
MODE
Power-Down
Power-Down
Read
Write
Selected, Outputs Disabled
OE\ CE1\ CE2
XHX
XXL
L LH
XLH
HLH
WE\ I/O0 - I/O7 POWER
X High Z Standby (ISB)
X High Z Standby (ISB)
H Data Out Active (ICC)
L Data In Active (ICC)
H
High Z
Active (ICC)
MT5C1008(LL)
Rev. 1.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Part Number MT5C1008LL
Description 128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
Maker Austin Semiconductor
Total Page 10 Pages
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