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BF9028DNT Datasheet Preview

BF9028DNT Datasheet

N-Channel MOSFET

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BF9028DNT pdf
BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor,
which is applied to electronic systems as a power switch. This device
has ESD-protection and low resistance characteristics.
.
TSSOP-8
1 : drain1
2,3 : source1
4 : gate1
5: gate2
6,7 : source2
8 : drain2
Features
Can be driven by a 2.3 V power source
Low on-state resistance
RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A)
RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A)
RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
Built-in G-S protection diode against ESD
Lead Pb-free and Halogen-free
14
Absolute Maximum Ratings(TC = 25)
Symbol
VDS
ID
IDM
VGS
PD
TJ,Tstg
TL
Parameter
Drain-Source Voltage
Drain Current(continuous)at Tc=25
Drain Current (pulsed)
Gate-Source Voltage
Power Dissipation TC = 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
(Note a)
Value
20
6
24
±10
1.5
-55 to +150
150
Unit
V
A
A
V
W
Ordering Information
Part Number
BF9028DNT
Datasheet
Package
TSSOP-8
TS-MOS-PD-0050 Rev.A/0(2011.02.28)
Packaging
3000pcs Tape&Reel
Page 1 of 7



BYD
BYD

BF9028DNT Datasheet Preview

BF9028DNT Datasheet

N-Channel MOSFET

No Preview Available !

BF9028DNT pdf
BYD Microelectronics Co., Ltd.
BF9028DNT
Electrical Characteristics (Tc = 25)
Symbol Parameter
Test Conditions
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V
IDSS Zero Gate Voltage Drain Current VDS =20V, VGS =0V
IGSS Gate-body Leakage Current
VGS=±12V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250uA
VGS=4.5V,ID=3A
RDS(on) Static Drain-source On Resistance VGS=3.8V, ID=3A
VGS=2.5V, ID=3A
Ciss Input Capacitance
Coss Output Capacitance
VDS=15V,f=1MHZ,VGS=0V
Crss Reverse Transfer Capacitance
td(on)
tr
td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDD=10V,ID=3A,VGS=4V,
RG=10
(Note b,c)
tf Fall Time
Qg Total Gate Charge
Qgs Gate-source Charge
Qgd Gate-Drain Charge
VDS=16V,ID=6A,VGS=4.5V
(Note b,c)
VSD(*) Forward On Voltage
VGS=0V,IF=6A
Min.
20
0.5
Typ.
0.8
16
17.5
22
800
150
20
100
200
2500
1200
12
2.5
4
0.7
Max.
10
±10
1.5
22
24
29
Unit
V
uA
uA
V
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Notes
a: Repetitive Rating : Pulse width limited by maximum junction temperature
b: Pulse Test : Pulse width 300μs, Duty cycle 2%
c: Essentially independent of operating temperature
(*)Pulsed:Pulse duration
Caution: These values must not be exceeded under any conditions.
Remark: The diode connected between the gate and source of the transistor serves as a protector
against ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
Datasheet
TS-MOS-PD-0050 Rev.A/0(2011.02.28)
Page 2 of 7


Part Number BF9028DNT
Description N-Channel MOSFET
Maker BYD
Total Page 7 Pages
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