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BF910N60L Datasheet Preview

BF910N60L Datasheet

N-Channel MOSFET

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BF910N60L pdf
BYD Microelectronics Co., Ltd.
BF910N60/BF910N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =10A
z RDS(ON) =0.65 TYP(VGS=10V,ID=5.0A)
z Low CRSS (typical 16pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF910N60L
BF910N60
600
10
40
±30
490
10
13.9 4.8
5.0
139 48
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Datasheet
TS-MOS-PD-0005 Rev.A/4
Page 1 of 11



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BYD

BF910N60L Datasheet Preview

BF910N60L Datasheet

N-Channel MOSFET

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BF910N60L pdf
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF910N60
BF910N60L
Package
TO-220F
TO-220
BF910N60/BF910N60L
Packaging
Tube
Tube
Thermal Data
Symbol Parameter
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
2.6
62.5
TO-220
0.9
62.5
Unit
/W
/W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-body Leakage
Current
ID=250uA, VGS=0V
VDS=600V, VGS=0V
VDS=600V,VGS=0V,Tc=125°C
VGS=±30V ,VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS ,ID=250uA
VGS=10V ,ID=5.0A
VDS=25V,f=1MHZ,VGS=0V
td(on)
Turn-on Delay Time
tr
td(off)
Rise Time
Turn-off Delay Time
VDD=300V, ID=5A
VGS=10V ,RG=4.7Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=480V, ID=10A
VGS=10V
(Note4,5)
IF=10A ,VGS=0V
VDD=300V,IF=10A,di/dt=100A/us
(Note4)
Min.
600
2.0
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 9.5 A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 10A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
(*).Pulsed:Pulse duration
Typ.
0.65
1900
146
16
30
18
60
24
55
16
17.2
0.81
450
Max.
10
100
Unit
V
uA
uA
±100 nA
4.0 V
0.85
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
ns
Datasheet
TS-MOS-PD-0005 Rev.A/4
Page 2 of 11


Part Number BF910N60L
Description N-Channel MOSFET
Maker BYD
Total Page 11 Pages
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