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NX8560MC Datasheet Preview

NX8560MC Datasheet

EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE

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NX8560MC pdf
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PRELIMINARY DATA SHEET
NEC's EA MODULATOR
INTEGRATED InGaAsP MQW DFB
LASER DIODE MODULE WITH DRIVER
FOR 10 Gb/s APPLICATIONS
NX8560MC
SERIES
FEATURES
INTEGRATED ELECTROABSORPTION MODULATOR
• INTERNAL DRIVER IC
UP TO 40 km TRANSMISSION 10 Gb/s
(Dispersion: 800 ps/nm)
• 19-PIN MINI-BUTTERFLY PACKAGE
DESCRIPTION
NEC's NX8560MC Series is an Electro-Absorption (EA) Modu-
lator integrated, 1550 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode module
with an internal driver IC. It is capable of transmitting up to 40
km standard single mode fiber (dispersion: 800 ps/nm) for 10
Gb/s applications with built in wavelength monitor.
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = 0 to +75°C, BOL unless otherwise specified)
PART NUMBER
NX8560MC Series
SYMBOLS
TSET
VFLD
Iop
ITH
Pf
λp
SMSR
ER
S11
tr
tf
DP
ISOL
VSS
ISS
VMOD
VB
Vx1, Vx2
DIN, DINB
PARAMETERS AND CONDITIONS
Laser Set Temperature
Forward Voltage of LD, IFLD = Iop
Operating Current, TLD = Tset
Threshold Current, TLD = Tset
Optical Output from Fiber, Under modulation1
NX8560MC
NX8560MCS
Peak Emission Wavelength, IFLD = Iop, VEA = 0 V,
TLD = TSET
Side Mode Suppression Ratio, IFLD = Iop, VEA = 0 V
Extinction Ratio, Under modulation1 NX8560MC
NX8560MCS
Input Return Loss,IFLD = IOP, VEA = 1 V,
f = 130 MHz to 10 GHz
Rise Time, 20-80%, Under modulation1
Fall Time, 80-20%, Under modulation1
Dispersion Penalty, under modulation1, 2
Optical Isolation
Driver Power Supply Voltage
Driver Power Supply Current
Modulator Modulation Control Voltage
Modulator Bias Control Voltage
Cross Point Control Voltage, Cross Point: 50%
Data Input Voltage, Differential input, AC-coupled
Notes:
1. 9.95328 Gb/s, PRBS 231_1, IFLD = Iop, TLD = TSET, NEC Test System.
Iop: a certain point between 50 mA and 80 mA.
Vm: a certain point between VSS and VSS+1.0 V.
Vb: a certain point between VSS and VSS+2.2 V.
Vx1 (Vx2): a certain point between VSS+0.8 V and VSS+2.2 V
2. BER = 10-10
UNITS
°C
V
mA
mA
dBm
dBm
nm
dB
dB
dB
dB
ps
ps
dB
dB
V
mA
V
V
V
Vpp
MIN
20
50
-1
-5
1530
30
10
8.2
25
-5.5
VSS
VSS
VSS+0.8
0.5
TYP
25
60
7
-10
-5.2
MAX
35
2.0
80
20
+2
-1
1565
40
40
2.0
-5.0
300
VSS+1.0
VSS+2.2
VSS+2.2
1.0
California Eastern Laboratories



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NX8560MC Datasheet Preview

NX8560MC Datasheet

EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE

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NX8560MC pdf
NX8560MC Series
ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Monitor PD: TLD = TSET, TC = 0 to +75°C)
PART NUMBER
NX8560MC Series
SYMBOLS
Im
ID
Ct
γ1
PARAMETERS AND CONDITIONS
Monitor Current, VRPD = 5V, IFLD = IOP, VEA = 0 V
Dark Current, VRPD = 5 V, VEA = 0 V
Terminal Capacitance, VRPD = 5 V, f = 1 Mhz
Tracking Error, Im = const.
UNITS
µA
nA
pF
dB
MIN
100
Note:
1. γ = 10 log Pf
Pop
Pf
(mW)
Pop
Pf
TLD = TC = 25°C
TLD = 25°C, TC = -20 to +75°C
TYP
0 Im
(at Pf (25°C) = Pop)
Im
MAX
1500
10
15
0.5
ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TEC: TLD = 25°C, TC = 0 to +75°C)
PART NUMBER
NX8560MC Series
SYMBOLS
R
B
IC
VC
PARAMETERS AND CONDITIONS
Thermistor Resistance
B Constant
Cooler Current, T = 75°C – Tset
Cooler Voltage, T = 75°C – Tset
UNITS
k
K
A
V
MIN
9.5
3350
TYP
10.0
3450
MAX
10.5
3550
1.5
2.5
USAGE CAUTIONS
1. Pins #9 and 11 are to be connected to DC-blocking capacitors.
2. It is recommended to connect Pins #3 through 7 to the RF-bypass (shunt) capacitors.
3. "Turn on order" for the power supply of driver IC:
• At first, Vb, Vm, Vx1 (Vx2) are to be turned on.
• After that, VSS is to be turned on.
4. "Turn off order" for the power supply of driver IC:
• At first, VSS is to be turned off.
• After that, Vb, Vm, Vx1 (Vx2) are to be turned off.
Among Vb, Vm, Vx1, Vx2, there is no turn on/off order specified.


Part Number NX8560MC
Description EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE
Maker CEL
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