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Chino-Excel Technology
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CEM6200 Datasheet Preview

CEM6200 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEM6200 pdf
CEM6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 2.6A, RDS(ON) = 230m@VGS = 10V.
RDS(ON) = 270m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
5
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 2.6
IDM 10.4
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.March
http://www.cetsemi.com



Chino-Excel Technology
Chino-Excel Technology

CEM6200 Datasheet Preview

CEM6200 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM6200 pdf
CEM6200
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1.5A
VGS = 4.5V, ID = 1.2A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 5V, ID = 2.6A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 27.5V, ID = 2.3A,
VGS = 10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS =27.5V, ID =2.1A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
60
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
188 230 m
207 270 m
10 S
230 pF
45 pF
25 pF
8 16
2.4 4.8
16.7 33.4
1.6 3.2
2.4 3.2
0.8
1.1
ns
ns
ns
ns
nC
nC
nC
2.6 A
1.3 V
6
2


Part Number CEM6200
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Chino-Excel Technology
Total Page 4 Pages
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