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Cypress Semiconductor Electronic Components Datasheet

CYU01M16SFCU Datasheet

16-Mbit (1M x 16) Pseudo Static RAM

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CYU01M16SFCU pdf
PRELIMINARY
CYU01M16SFCU
MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V
• Access Time: 70 ns
• Ultra-low active power
— Typical active current: 3 mA @ f = 1 MHz
— Typical active current: 18mA @ f = fmax
• Ultra low standby power
• 16-word Page Mode
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a 48-ball BGA Package
• Operating Temperature: –40°C to +85°C
Functional Description[1]
The CYU01M16SFCU is a high-performance CMOS Pseudo
Static RAM organized as 1M words by 16 bits that supports an
asynchronous memory interface. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
Logic Block Diagram
DATA IN DRIVERS
portable applications such as cellular telephones. The device
can be put into standby mode when deselected (CE1 HIGH or
CE2 LOW or both BHE and BLE are HIGH). The input/output
pins (I/O0 through I/O15) are placed in a high-impedance state
when: deselected (CE1 HIGH or CE2 LOW), outputs are
disabled (OE HIGH), both Byte High Enable and Byte Low
Enable are disabled (BHE, BLE HIGH), or during a write
operation (CE1 LOW and CE2 HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0
through I/O7), is written into the location specified on the
address pins (A0 through A19). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8 through I/O15) is written into
the location specified on the address pins (A0 through A19).
Reading from the device is accomplished by taking Chip
Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE)
LOW while forcing the Write Enable (WE) HIGH. If Byte Low
Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory will appear
on I/O8 to I/O15. Refer to the truth table for a complete
description of read and write modes.
AAAAAAAAAAA11111111141088326579
1M x 16
RAM Array
A19
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
BHE
WE
OE
BLE
Power -Down
Circuit
BHE
BLE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
CE2
CE1
CE2
CE1
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
www.DDaotacSuhmeeetn4Ut #.n:e3t 8-05603 Rev. *B
Revised January 25, 2006


Cypress Semiconductor Electronic Components Datasheet

CYU01M16SFCU Datasheet

16-Mbit (1M x 16) Pseudo Static RAM

No Preview Available !

CYU01M16SFCU pdf
PRELIMINARY
CYU01M16SFCU
MoBL3™
Pin Configuration[2, 3]
48-Ball VFBGA
Top View
12
34
56
BLE OE A0 A1 A2 CE2
I/O8 BHE A3 A4 CE1 I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 A17 A7 I/O3 VCC
VCC I/O12 NC
A16 I/O4 VSS
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 A19 A12 A13 WE I/O7
A18 A8 A9 A10 A11
NC
A
B
C
D
E
F
G
H
Product Portfolio[4]
Product
CYU01M16SFCU
VCC Range (V)
Min.
Typ.[4]
Max.
1.7 1.8 1.95
Speed
(ns)
70
Power Dissipation
Operating ICC (mA)
f = 1MHz
Typ.[4] Max.
f = fmax
Typ.[4] Max.
Standby ISB2 (µA)
Typ.[4] Max.
3 5 18 25 55 70
Power-up Characteristics
The initialization sequence is shown in the figure below. Chip
Select should be CE1 HIGH or CE2 LOW for at least 200 µs
after VCC has reached a stable value. No access must be
attempted during this period of 200 µs.
VCC
CE1
Stable Power
Tpu
First Access
Parameter
Description
Min.
Typ.
Max.
Unit
Tpu
Chip Enable Low After Stable VCC
200
µs
Notes:
2. Ball H6 and E3 can be used to upgrade to a 32-Mbit and a 64-Mbit density, respectively.
3. NC “no connect” - not connected internally to the die.
4.
Typical values are included for reference only and are not guaranteed
and after design changes that may affect the parameters.
or
tested.
Typical
values
are measured at
VCC =
VCC
(typ) and
TA = 25°C.
Tested
initially
Document #: 38-05603 Rev. *B
Page 2 of 12


Part Number CYU01M16SFCU
Description 16-Mbit (1M x 16) Pseudo Static RAM
Maker Cypress Semiconductor
Total Page 12 Pages
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