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Cystech Electonics
Cystech Electonics

BTB1424N3 Datasheet Preview

BTB1424N3 Datasheet

Low VCE(sat) PNP Epitaxial Planar Transistor

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CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424N3
Spec. No. : C817N3-R
Issued Date : 2003.04.03
Revised Date :2004.09.30
Page No. : 1/5
Features
Excellent DC current gain characteristics
Low Saturation Voltage
VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA).
Complementary to BTD2150N3
Pb-free package
Symbol
BTB1424N3
Outline
SOT-23
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note 1: Single pulse, Pw10ms, Duty Cycle30%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
Limits
-50
-50
-5
-3
-7
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTB1424N3
CYStek Product Specification



Cystech Electonics
Cystech Electonics

BTB1424N3 Datasheet Preview

BTB1424N3 Datasheet

Low VCE(sat) PNP Epitaxial Planar Transistor

No Preview Available !

BTB1424N3 pdf
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C817N3-R
Issued Date : 2003.04.03
Revised Date :2004.09.30
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-50
-50
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
240
35
Classification Of hFE
Max.
-
-
-
-1
-1
-0.5
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-30V
VEB=-3V
IC=-2A, IB=-100mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Rank P Q R S
Range
82~180 120~270 180~390 270~560
Ordering Information
Device
BTB1424N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
AE
BTB1424N3
CYStek Product Specification


Part Number BTB1424N3
Description Low VCE(sat) PNP Epitaxial Planar Transistor
Maker Cystech Electonics
Total Page 5 Pages
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Cystech Electonics
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