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Cystech Electonics
Cystech Electonics

BTB1426A3 Datasheet Preview

BTB1426A3 Datasheet

Low VCE(SAT) PNP Epitaxial Planar Transistor

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BTB1426A3 pdf
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CYStech Electronics Corp.
Low VCE(SAT) PNP Epitaxial Planar Transistor
BTB1426A3
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 1/4
Description
The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications.
Features
High DC current gain and excellent hFE linearity.
Low Saturation Voltage
VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).
Symbol
Outline
BTB1426A3
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single pulse, Pw10ms, Duty Cycle2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
BTB1426A3
ECB
Limits
-20
-20
-6
-3
-5 (Note )
750
167
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
CYStek Product Specification



Cystech Electonics
Cystech Electonics

BTB1426A3 Datasheet Preview

BTB1426A3 Datasheet

Low VCE(SAT) PNP Epitaxial Planar Transistor

No Preview Available !

BTB1426A3 pdf
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-20
-20
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
240
35
Classification Of hFE
Max.
-
-
-
-0.1
-0.1
-0.5
820
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-20V
VEB=-5V
IC=-2A, IB=-0.1A
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Rank
Range
Q
120~270
R
180~390
S
270~560
T
390~820
BTB1426A3
CYStek Product Specification


Part Number BTB1426A3
Description Low VCE(SAT) PNP Epitaxial Planar Transistor
Maker Cystech Electonics
Total Page 4 Pages
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Cystech Electonics
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