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Diodes Semiconductor Electronic Components Datasheet

2DB1713 Datasheet

PNP SURFACE MOUNT TRANSISTOR

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2DB1713 pdf
2DB1713
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DD2678)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
C4 2 C
1B
TOP VIEW
Pin Out Configuration
Value
-15
-12
-6
-6
-3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
-15
-12
-6
270
Output Capacitance
Cobo
Typ
-120
40
Max
-0.1
-0.1
-250
680
Unit
V
V
V
μA
μA
mV
pF
Current Gain-Bandwidth Product
fT
180
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Conditions
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -15V, IE = 0
VEB = -6V, IC = 0
IC = -1.5A, IB = -30mA
VCE = -2V, IC = -500mA
VCB = -10V, IE = 0,
f = 1MHz
VCE = -2V, IC = -100mA,
f = 100MHz
2DB1713
Document number: DS31634 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

2DB1713 Datasheet

PNP SURFACE MOUNT TRANSISTOR

No Preview Available !

2DB1713 pdf
2.0
1.6
1.2
Note 4
0.8
0.4 Note 3
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
10,000
VCE = -2V
1,000 TA = 85°C
TA = 25°C
TA = -55°C
100
TA = 150°C
2DB1713
3.0
2.5
IB = -5mA
2.0
IB = -4mA
1.5 IB = -3mA
1.0 IB = -2mA
0.5 IB = -1mA
0
0 1 2 3 45
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 20
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = -2V
1.0
0.001
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2 TA = 150°C
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1713
Document number: DS31634 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated


Part Number 2DB1713
Description PNP SURFACE MOUNT TRANSISTOR
Maker Diodes
Total Page 4 Pages
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