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Fairchild Semiconductor Electronic Components Datasheet

F08H60S Datasheet

FFPF08H60S

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F08H60S pdf
November 2014
FFPF08H60S
8 A, 600 V, Hyperfast II Diode
Features
Hyperfast Recovery trr = 45 ns (@ IF = 8 A)
Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
RoHS Compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Free-Wheeling Diode for Motor Application
• Power Switching Circuits
Description
The FFPF08H60S is a hyperfast II diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes
and is silicon nitride passivated ionimplanted epitaxial planar
construction. These devices are intended to be used as
freewheeling/ clamping diodes and diodes in a variety of
switching power supplies and other power switching
applications. Their low stored charge and hyperfast soft recovery
minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Pin Assignments
TO-220F-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 105 °C
Operating Junction and Storage Temperature
Ratings
600
600
600
8
60
- 65 to +175
Unit
V
V
V
A
A
°C
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
3.4
Unit
°C/W
Package Marking and Ordering Information
Part Number
FFPF08H60STU
Top Mark
FFPF08H60S
Package Packing Method
TO-220F-2L
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
60
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

F08H60S Datasheet

FFPF08H60S

No Preview Available !

F08H60S pdf
Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
VF1
IR1
trr
ta
tb
Qrr
WAVL
Conditions
IF = 8 A
IF = 8 A
VR = 600 V
VR = 600 V
IF =1 A, diF/dt = 100 A/µs, VR = 30 V
IF =8 A, diF/dt = 100 A/µs, VR = 390 V
IF =8 A, diF/dt = 100 A/µs, VR = 390 V
Avalanche Energy (L = 40 mH)
Notes:
1. Pulse : Test Pulse width = 300 µs, Duty Cycle = 2%
Test Circuit and Waveforms
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
15
16
18.6
-
Max
2.1
1.7
100
200
35
45
-
-
-
-
Unit
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
2
www.fairchildsemi.com


Part Number F08H60S
Description FFPF08H60S
Maker Fairchild Semiconductor
Total Page 5 Pages
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