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Fairchild Semiconductor Electronic Components Datasheet

FCA20N60F Datasheet

N-CHANNEL FRFET MOSFET

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FCA20N60F pdf
FCA20N60F
May 2014
N-Channel SuperFET® FRFET® MOSFET
600 V, 20 A, 190 mΩ
Features
Description
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 150 m
• Fast Recovery Type (Typ. Trr = 160 ns )
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV
• Solar Inverter
• AC-DC Power Supply
SuperFET® MOSFET is Fairchild Semiconductor’s first
generation of high voltage super-junction (SJ) MOSFET family
that is utilizing charge balance technology for outstanding low
on-resistance and lower gate charge performance. This
technology is tailored to minimize conduction loss, provide
superior switching performance, dv/dt rate and higher
avalanche energy. Consequently, SuperFET MOSFET is very
suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. SuperFET FRFET® MOSFET’s optimized
body diode reverse recovery performance can remove
additional component and improve system reliability.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
PD
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate . bove 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FCA20N60F Rev. C3
1
G
S
FCA20N60F
600
20
12.5
60
± 30
690
20
20.8
50
208
1.67
-55 to +150
300
FCA20N60F
0.6
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FCA20N60F Datasheet

N-CHANNEL FRFET MOSFET

No Preview Available !

FCA20N60F pdf
Package Marking and Ordering Information
Part Number
FCA20N60F
Top Mark
FCA20N60F
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDSS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 250 μA, TJ = 25°C
VGS = 0 V, ID = 250 μA, TJ = 150°C
ID = 250 μA, Referenced to 25°C
VGS = 0 V, ID = 20 A
600
--
--
--
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VDS = 600 V, VGS = 0 V,
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0V
VGS = -30 V, VDS = 0V
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 10 A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 10 A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
VDS = 0 V to 400 V, VGS = 0 V
--
--
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 20 A,
RG = 25Ω
VDS = 480 V, ID = 20 A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 20 A,
dIF/dt = 100 A/μs
--
--
--
--
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 20 A, di/dt 1200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ.
--
650
0.6
700
--
--
--
--
--
0.15
17
2370
1280
95
65
165
62
140
230
65
75
13.5
36
--
--
--
160
1.1
Max. Unit
-- V
-- V
-- V/°C
--
10
100
100
-100
V
μA
μA
nA
nA
5.0 V
0.19 Ω
-- S
3080
1665
--
85
--
pF
pF
pF
pF
pF
135 ns
290 ns
470 ns
140 ns
98 nC
18 nC
-- nC
20 A
60 A
1.4 V
-- ns
-- μC
©2007 Fairchild Semiconductor Corporation
FCA20N60F Rev. C3
2
www.fairchildsemi.com


Part Number FCA20N60F
Description N-CHANNEL FRFET MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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