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Fairchild Semiconductor Electronic Components Datasheet

FDD3672_F085 Datasheet

N-Channel UltraFET Trench MOSFET

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FDD3672_F085 pdf
March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Features
„ Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
„ Typ Qg(10) = 24nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ Optimized efficiency at high frequencies
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures and VRMs
„ Primary Switch for 24V and 48V Systems
„ High Voltage Synchronous Rectifier
FDD3672_F085 Rev. C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD3672_F085 Datasheet

N-Channel UltraFET Trench MOSFET

No Preview Available !

FDD3672_F085 pdf
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 30oC, VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energy
Power Dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper
pad area
Ratings
100
±20
44
See Figure 4
73
144
0.96
-55 to +175
1.04
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD3672
FDD3672_F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 80V, VGS = 0V
TJ = 150oC
VGS = ±20V
100
-
-
-
- -V
-1
μA
- 250
- ±100 nA
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
234V
ID = 44A, VGS= 10V
- 0.024 0.028 Ω
ID = 21A, VGS= 6V,
- 0.028 0.047 Ω
ID = 44A, VGS= 10V, TJ = 175°C - 0.063 0.074 Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
- 1635 -
- 240 -
- 60 -
pF
pF
pF
Qg(TOT) Total Gate Charge at 10V
VGS = 0 to 10V
- 24 36 nC
Qg(TH)
Qgs
Qgs2
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
VGS = 0 to 2V
VDD = 50V
ID = 44A
Ig = 1.0mA
-
-
-
3 4.5 nC
8.3 - nC
5.3 - nC
Qgd Gate to Drain “Miller“ Charge
- 5.8 - nC
FDD3672_F085 Rev. C
2
www.fairchildsemi.com


Part Number FDD3672_F085
Description N-Channel UltraFET Trench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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