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Fairchild Semiconductor Electronic Components Datasheet

FDD850N10LD Datasheet

N-Channel PowerTrench MOSFET + Diode

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FDD850N10LD pdf
November 2013
FDD850N10LD
BoostPak (N-Channel PowerTrench® MOSFET + Diode)
100 V, 15.3 A, 75 mΩ
Features
• RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
• RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
• Low Gate Charge (Typ. 22.2 nC)
• Low Crss (Typ. 42 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop
and excellent switching performance.
Applications
• LED Monitor Backlight
• LED TV Backlight
• LED Lighting
• Consumer Appliances,
DC-DC converter (Step up & Step down)
3
12
45
3
TO252-5L
1. Gate
2. Source
3. Drain / Anode
4. Cathode
5. Cathode
1
Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
IF(AV)
IFSM
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Diode Average Rectified Forward Current (TC = 138oC)
Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case for MOSFET, Max.
Thermal Resistance, Junction to Case for Diode, Max.
Thermal Resistance, Junction to Ambient, Max.
4,5
2
FDD850N10LD
100
±20
15.3
9.7
46
41
6.0
42
0.33
5
50
-55 to +150
300
FDD850N10LD
3.0
2.5
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
A
A
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDD850N10LD Rev. C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD850N10LD Datasheet

N-Channel PowerTrench MOSFET + Diode

No Preview Available !

FDD850N10LD pdf
Package Marking and Ordering Information
Part Number
FDD850N10LD
Top Mark
850N10LD
Package Packing Method
TO-252 5L Tape and Reel
Reel Size
13”
Tape Width
16 mm
Electrical Characteristics of the MOSFET TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 12 A
VGS = 5 V, ID =12 A
VDS = 10 V, ID = 15.3 A
1.0
-
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V, ID = 15.3 A
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
61
64
31
1100
80
42
22.2
12.3
3.0
5.7
1.75
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 15.3 A,
VGS = 5 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 15.3 A, VDS = 80 V,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 15.3 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
17
21
27
8
-
-
-
38
50
Quantity
2500 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
2.5 V
75
96
mΩ
-S
1465
105
-
28.9
16.0
-
-
-
pF
pF
pF
nC
nC
nC
nC
Ω
44 ns
52 ns
64 ns
26 ns
15.3 A
46 A
1.3 V
- ns
- nC
©2013 Fairchild Semiconductor Corporation
FDD850N10LD Rev. C2
2
www.fairchildsemi.com


Part Number FDD850N10LD
Description N-Channel PowerTrench MOSFET + Diode
Maker Fairchild Semiconductor
Total Page 11 Pages
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