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Fairchild Semiconductor Electronic Components Datasheet

FDMC86160 Datasheet

N-Channel Power Trench MOSFET

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FDMC86160 pdf
FDMC86160
N-Channel Power Trench® MOSFET
100 V, 43 A, 14 mΩ
January 2013
Features
General Description
„ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
„ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ulta low RDS onis
required in small spaces such as High performance VRM, POL
and orring functions.
Applications
„ Bridge Topologies
„ Synchronous Rectifier
Pin 1
Pin 1
S
S
SG
S
S
D
D
D
DD
D
Top Bottom
Power 33
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
43
9
50
181
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86160
Device
FDMC86160
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86160 Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Fairchild Semiconductor Electronic Components Datasheet

FDMC86160 Datasheet

N-Channel Power Trench MOSFET

No Preview Available !

FDMC86160 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100 V
73 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2 2.9 4 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-9 mV/°C
VGS = 10 V, ID = 9 A
11.2 14
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 7 A
16 23 mΩ
VGS = 10 V, ID = 9 A, TJ = 125 °C
21 26
gFS Forward Transconductance
VDD = 10 V, ID = 9 A
43 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
968 1290 pF
241 320 pF
11 20 pF
0.1 0.6 2.5 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 9 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V
VDD = 50 V,
ID = 9 A
9.7 19 ns
3.6 10 ns
16 30 ns
3.4 10 ns
15 22 nC
9.8 15 nC
4.4 nC
3.5 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 9 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9 A, di/dt = 100 A/μs
0.79 1.3
V
0.72 1.2
V
47 75 ns
45 73 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 181 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 11 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 35 A.
©2013 Fairchild Semiconductor Corporation
FDMC86160 Rev. C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMC86160
Description N-Channel Power Trench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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