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Fairchild Semiconductor Electronic Components Datasheet

FDMC86248 Datasheet

N-Channel Power Trench MOSFET

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FDMC86248 pdf
September 2012
FDMC86248
N-Channel Power Trench® MOSFET
150 V, 13 A, 90 mΩ
Features
General Description
„ Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
„ Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Primary MOSFET
„ MV synchronous rectifier
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 33
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
13
3.4
15
37
36
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.4
53
°C/W
Device Marking
FDMC86248
Device
FDMC86248
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C3
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Fairchild Semiconductor Electronic Components Datasheet

FDMC86248 Datasheet

N-Channel Power Trench MOSFET

No Preview Available !

FDMC86248 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
104 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
2.0 3.2 4.0 V
ID = 250 μA, referenced to 25 °C
-9 mV/°C
VGS = 10 V, ID = 3.4 A
VGS = 6 V, ID = 2.9 A
VGS = 10 V, ID = 3.4 A, TJ = 125 °C
VDS = 10 V, ID = 3.4 A
69 90
89 125 mΩ
140 183
10 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
393 525 pF
50 70 pF
2.6 5.0 pF
0.8 2.0 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 3.4 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 75 V,
ID = 3.4 A
6.9 14 ns
1.4 10 ns
11 20 ns
2.8 10 ns
6.4 9.0 nC
3.7 5.2 nC
1.9 nC
1.7 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 3.4 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.80 1.3
0.78 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 3.4 A, di/dt = 100 A/μs
54 86 ns
48 77 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 37 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 5 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 12 A.
©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C3
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMC86248
Description N-Channel Power Trench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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