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Fairchild Semiconductor Electronic Components Datasheet

FDMC86520DC Datasheet

N-Channel Power Trench MOSFET

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FDMC86520DC pdf
FDMC86520DC
September 2012
N-Channel Dual CoolTM PowerTrench® MOSFET
60 V, 40 A, 6.3 mΩ
Features
General Description
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A
„ Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.5 A
„ High performance technology for extremely low rDS(on)
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Primary DC-DC Switch
„ Motor Bridge Switch
„ Synchronous Rectifier
Pin 1
G
S
S
S
SD
SD
D
D
D
D
Top Power 33
Bottom
MOSFET Maximum Ratings TA= 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
60
±20
40
17
80
128
73
3.0
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
86520
Device
FDMC86520DC
Package
Dual CoolTM Power 33
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
4.2
1.7
42
105
17
26
12
Reel Size
13’’
Tape Width
12 mm
°C/W
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Fairchild Semiconductor Electronic Components Datasheet

FDMC86520DC Datasheet

N-Channel Power Trench MOSFET

No Preview Available !

FDMC86520DC pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 17 A
VGS = 8 V, ID = 14.5 A
VGS = 10 V, ID = 17 A, TJ = 125°C
VDS = 10 V, ID = 17 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 17 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V VDD = 30 V,
ID = 17 A
Drain-Source Diode Characteristics
VSD Source-Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 17 A
VGS = 0 V, IS = 2.5 A
(Note 2)
(Note 2)
IF = 17 A, di/dt = 100 A/μs
Min
60
2.5
0.1
Typ
30
3.7
-10
5.1
6.5
8.2
49
2097
557
13
0.5
18
6.6
19
4
29
23
12
5.5
0.83
0.74
41
23
Max Units
1
±100
V
mV/°C
μA
nA
4.5 V
mV/°C
6.3
8.7 mΩ
10.2
S
2790
745
40
2.5
pF
pF
pF
Ω
33 ns
14 ns
35 ns
10 ns
40 nC
33 nC
nC
nC
1.3
V
1.2
65 ns
37 nC
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMC86520DC
Description N-Channel Power Trench MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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