http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Fairchild Semiconductor Electronic Components Datasheet

FDMS8888 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

FDMS8888 pdf
July 2011
FDMS8888
NNNN
N-Channel PowerTrench® MOSFET
30 V, 21 A, 9.5 m:
Features
General Description
„ Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A
„ Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A
„ Advanced Package and Silicon combination
for low rDS(on) and high efficiency
The FDMS8888 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
„ MSL1 robust package design
„ RoHS Compliant
Applications
„ Synchronous Buck for Notebook Vcore and Server
„ Notebook Battery Pack
„ Load Switch
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Parameter
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D5
D6
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
4G
3S
2S
1S
Ratings
30
±20
21
51
13.5
80
54
42
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.3
50
°C/W
Device Marking
8888
Device
FDMS8888
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS8888 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

FDMS8888 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 10.9 A
VGS = 10 V, ID = 13.5 A, TJ = 125 °C
VDD = 10 V, ID = 13.5 A
1.2
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 13.5 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 15 V,
ID = 13.5 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 13.5 A
(Note 2)
(Note 2)
IF = 13.5 A, di/dt = 100 A/Ps
Typ Max Units
V
19 mV/°C
1
±100
PA
nA
1.9 2.5
V
-7 mV/°C
8 9.5
11 14.5 m:
12 14.5
78 S
1195
234
161
0.9
1585
315
245
2.5
pF
pF
pF
:
9 18 ns
6 12 ns
23 27 ns
4 10 ns
23 33 nC
13 18 nC
3.5 nC
5.1 nC
0.74 1.2
V
0.84 1.2
V
20 32 ns
8 16 nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.C
2
www.fairchildsemi.com


Part Number FDMS8888
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
PDF Download
FDMS8888 pdf
Download PDF File
FDMS8888 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 FDMS8880 MOSFET Fairchild Semiconductor
Fairchild Semiconductor
FDMS8880 pdf
2 FDMS8888 N-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor
FDMS8888 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components