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Fairchild Semiconductor Electronic Components Datasheet

FDPF5N50NZ Datasheet

N-Channel MOSFET

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FDPF5N50NZ pdf
FDP5N50NZ / FDPF5N50NZ
N-Channel UniFETTM II MOSFET
500 V, 4.5 A, 1.5
Features
• R DS(on) = 1.38 (Typ.) @ VGS = 10 V, ID = 2.25 A
• Low Gate Charge (Typ. 9 nC)
Low CRSS (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/ LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
December 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220
G
GDS TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering ,
1/8” from Case for 5 Seconds.
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDP5N50NZ / FDPF5N50NZ Rev. C1
1
S
FDP5N50NZ FDPF5N50NZ
500
±25
4.5 4.5*
2.7 2.7*
(Note 1)
18
18*
(Note 2)
160
(Note 1)
4.5
(Note 1)
7.8
(Note 3)
10
78 30
0.62 0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDP5N50NZ
1.6
62.5
FDPF5N50NZ
4.1
62.5
Unit
oC/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDPF5N50NZ Datasheet

N-Channel MOSFET

No Preview Available !

FDPF5N50NZ pdf
Package Marking and Ordering Information
Part Number
FDP5N50NZ
FDPF5N50NZ
Top Mark
FDP5N50NZ
FDPF5N50NZ
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 µA, VGS = 0 V, TC = 25oC
ID = 250 µA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V,TC = 125oC
VGS = ±25 V, VDS = 0 V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 µA
VGS = 10 V, ID = 2.25 A
VDS = 20 V, ID = 2.25 A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V
f = 1 MHz
VDS = 400 V ID = 4.5 A
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
1.38
3.54
330
50
4
9
2
4
Max. Unit
-V
-o
1
A
10
±10 A
5.0 V
1.5
-S
440 pF
70 pF
8 pF
12 nC
- nC
- nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 4.5 A
VGS = 10 V, RGEN = 25
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 4.5 A
dIF/dt = 100 A/µs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 15.8 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 , starting TJ = 25°C.
3: ISD 2.8 A, di/dt 200 A/µs , VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
12 35 ns
22 55 ns
28 65 ns
21 50 ns
- 4.5 A
- 18 A
- 1.4 V
210 - ns
1.1 - C
©2010 Fairchild Semiconductor Corporation
FDP5N50NZ / FDPF5N50NZ Rev. C1
2
www.fairchildsemi.com


Part Number FDPF5N50NZ
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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