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Fairchild Semiconductor Electronic Components Datasheet

FDS6673BZ_F085 Datasheet

P-Channel PowerTrench MOSFET

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FDS6673BZ_F085 pdf
PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET
-30V, -14.5A, 7.8m
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
„ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
„ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
„ Extended VGS range (-25V) for battery applications
„ HBM ESD protection level of 6.5kV typical (note 3)
„ High performance trench technology for extremely low
rDS(on)
„ High power and current handling capability
„ RoHS compliant
„ Qualified to AEC Q101
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note1a)
Power Dissipation for Single Operation
(Note1a)
PD (Note1b)
(Note1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ _F085
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS6673BZ_F085 Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDS6673BZ_F085 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

FDS6673BZ_F085 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
ID = -250µA, referenced to
25°C
VDS = -24V, VGS = 0V
VGS = ±25V, VDS = 0V
-30 V
-20 mV/°C
-1 µA
±10 µA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
ID = -250µA, referenced to
25°C
VGS = -10V , ID = -14.5A
VGS = -4.5V, ID = -12A
VGS
TJ =
= -10V,
125oC
ID
=
-14.5A
VDS = -5V, ID = -14.5A
-1 -1.9 -3
V
8.1 mV/°C
6.5 7.8
9.6 12 m
9.7 12
60 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1.0MHz
3500
600
600
4700
800
900
pF
pF
pF
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain Charge
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6
VDS = -15V, VGS = -10V,
ID = -14.5A
VDS = -15V, VGS = -5V,
ID = -14.5A
14
16
225
105
88
46
8
23.5
26
29
36
167
124
65
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
trr Reverse Recovery Time
IF = 14.5A, di/dt = 100A/µs
Qrr Reverse Recovery Charge
IF = 14.5A, di/dt = 100A/µs
-0.7 -1.2
45
34
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 50 oC/W (10 sec)
when mounted on a 1 in2
pad of 2 oz copper
b) 105 oC/W when mounted
on a .04 in2 pad of 2 oz
copper
c) 125 oC/W when mounted
on a minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6673BZ_F085 Rev. A
2
www.fairchildsemi.com


Part Number FDS6673BZ_F085
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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