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Fairchild Semiconductor Electronic Components Datasheet

FGPF70N30 Datasheet

PDP IGBT

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FGPF70N30 pdf
FGPF70N30
300V, 70A PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat) =1.4V @ IC = 40A
• High Input Impedance
• Fast switching
• RoHS Complaint
Application
. PDP System
October 2006
General Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. FGPF70N30 offers
the optimum solution for PDP applications where low-condution
loss is essential.
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VCES
VGES
IC pulse(1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.1
* Ic_pluse limited by max Tj
FGPF70N30
300
±30
160
52
20.8
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
2.4
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FGPF70N30 Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGPF70N30 Datasheet

PDP IGBT

No Preview Available !

FGPF70N30 pdf
Package Marking and Ordering Information
Device Marking
FGPF70N30
Device
FGPF70N30TU
Package
TO-220F
Packaging
Type
Rail / Tube
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
BVCES/
TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
Collector to Emitter
VCE(sat) Saturation Voltage
IC = 250uA, VCE = VGE
IC =20A, VGE = 15V
IC =40A, VGE = 15V
IC = 70A, VGE = 15V
TC = 25oC
IC = 70A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200 V, IC = 40A
RG = 15, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200 V, IC = 40A
RG = 15, VGE = 15V
Resistive Load, TC = 125oC
VCE = 200 V, IC = 40A
VGE = 15V
Qty per Tube
50ea
Max Qty
per Box
-
Min. Typ. Max. Units
300 --
--
V
V/oC
-- 0.6 --
-- -- 100 uA
-- -- ± 250 nA
2.5 4.0
5
-- 1.2 1.5
-- 1.4 --
-- 1.8 --
-- 1.9 --
V
V
V
V
V
-- 1300 --
-- 180 --
-- 60 --
pF
pF
pF
-- 17 -- ns
-- 83 -- ns
-- 103 --
ns
-- 160 300 ns
-- 18 -- ns
-- 83 -- ns
-- 104 --
ns
-- 250 --
ns
-- 71 -- nC
-- 10 -- nC
-- 34 -- nC
2 www.fairchildsemi.com
FGPF70N30 Rev. A


Part Number FGPF70N30
Description PDP IGBT
Maker Fairchild Semiconductor
Total Page 7 Pages
PDF Download
FGPF70N30 pdf
FGPF70N30 Datasheet PDF
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