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Fairchild Semiconductor Electronic Components Datasheet

MDB10S Datasheet

(MDB6S - MDB10S) Single-Phase Bridge Rectifiers

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MDB10S pdf
October 2013
MDB6S / MDB8S / MDB10S
1 A, MicroDIP, Single-Phase Bridge Rectifiers
Features
• Low Package Profile: 1.60 mm (max)
• Small Area Requirements: 35 mm2
• Efficient VF
- 0.935 V (Typ) at 1 A
- 1.165 V (Typ) at 5 A
• IF(AV) = 1.0 A
• IFSM = 30 A
• Glass Passivated Junctions
• RoHS Compliant
• Halogen Free
• UL Certification: E352360
+-
Description
With the ever pressing need to improve power supply effi-
ciency and reliability, the MDBxS family is focused on offer-
ing a best in class small form factor combined with best in
class efficient rectifier performance.
The “S” family offers industry leading balance of efficiency,
size, and cost. They offer designers improved efficiency by
achieving an industry leading VF of 0.935 V Typ. at 1 A 25
°C, and a VF of 1.165 V Typ. at 5 A 25 °C. These lower VF
values offer roughly a 5% efficiency improvement over
measured competitive same form factor devices. This
lower VF vs. competitive devices results in cooler and more
efficient power supply operation.
The design supports a 30 A IFSM rating to absorb high
surge currents and offers rated breakdown voltages up to
1000 V.
Finally, the MDBxS family achieves all this in a small form
factor micro-dip package - offering a max height of 1.6 mm,
and requiring only 35 mm2 of board space.
Micro DIP
Ordering Information
Part Number
MDB6S
MDB8S
MDB10S
Marking
MDB6S
MDB8S
MDB10S
Package
Micro DIP
Packing Method
Tape and Reel
© 2010 Fairchild Semiconductor Corporation
MDB6S / MDB8S / MDB10S Rev. 1.2.1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/


Fairchild Semiconductor Electronic Components Datasheet

MDB10S Datasheet

(MDB6S - MDB10S) Single-Phase Bridge Rectifiers

No Preview Available !

MDB10S pdf
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
MDB6S
Value
MDB8S
MDB10S
Units
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current (1)
Peak Forward Surge Current (2)
I2t Rating for fusing (t < 8.3 ms)
600 800 1000 V
420 560 700
V
600 800 1000 V
1.0 A
30 A
3.735
A2S
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Notes:
1. 60 Hz sine wave, R-load, TA = 25°C on FR-4 PCB.
2. 60 Hz sine wave, Non-repetitive 1 cycle peak value, TJ = 25°C.
-55 to +150
-55 to +150
°C
°C
Thermal Characteristics(3)
Symbol
RθJA
ψJL
Note:
Parameter
Thermal Resistance, Junction-Ambient
Measurement with Dual Dice
Measurement with Single Die
Measured at Anode pin
Thermal Characterization, Junction to Lead
Measured at Cathode pin
Typ.
250
150
57
15
3. Device mounted on FR-4 PCB with board size = 76.2 mm x 114.3 mm (JESD51-3 standards).
Units
°C/W
°C/W
°C/W
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise specified.
Symbol
Parameter
VF Maximum Forward Voltage
IR Maximum Reverse Current
CJ Typical Junction Capacitance
Test condition
IF = 1 A,
Pulse measurement, Per diode
At VRRM,
Pulse measurement, Per diode
VR = 4 V, f = 1 MHz
Value
1.1
10
10
Units
V
μA
pF
© 2010 Fairchild Semiconductor Corporation
MDB6S / MDB8S / MDB10S Rev. 1.2.1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/


Part Number MDB10S
Description (MDB6S - MDB10S) Single-Phase Bridge Rectifiers
Maker Fairchild Semiconductor
Total Page 5 Pages
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