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Fairchild Semiconductor Electronic Components Datasheet

SSI2N80A Datasheet

Advanced Power MOSFET

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SSI2N80A pdf
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Advanced Power MOSFET
SSW/I2N80A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
Low RDS(ON) : 4.688 (Typ.)
BVDSS = 800 V
RDS(on) = 6.0
ID = 2 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
Thermal Resistance
Value
800
2
1.3
8
+_ 30
213
2
8
2.0
3.1
80
0.64
- 55 to +150
300
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.56
40
62.5
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ΟC
ΟC
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

SSI2N80A Datasheet

Advanced Power MOSFET

No Preview Available !

SSI2N80A pdf
SSW/I2N80A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
800 -- -- V
-- 1.06 -- V/ΟC
2.0 -- 3.5 V
-- -- 100 nA
-- -- -100
-- -- 25
-- -- 250 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=800V
VDS=640V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 6.0 VGS=10V,ID=0.85A O4 *
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.56 -- VDS=50V,ID=0.85A O4
-- 425 550
--
45
55
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 19 25
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
-- 22 55
VDD=400V,ID=2A,
-- 38 85 ns RG=16
-- 18 45
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 22 30
-- 3.8 --
-- 11.6 --
VDS=640V,VGS=10V,
nC ID=2A
O4 O5
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 2
Integral reverse pn-diode
A
O1 -- -- 8
in the MOSFET
O4 -- -- 1.4 V TJ=25 ΟC,IS=1.7A,VGS=0V
-- 290 -- ns TJ=25 ΟC,IF=2A
-- 0.8 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=100mH, IAS=2A, VDD=50V, RG=27, Starting TJ =25 ΟC
O3 ISD<_ 2A, di/dt <_90A/ µs, VDD <_BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature


Part Number SSI2N80A
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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