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AO4588 Datasheet

30V N-Channel MOSFET

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AO4588 pdf
AO4588
30V N-Channel MOSFET
General Description
The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R .DS(ON) This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
30V
20A
< 4.8m
< 6.2m
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
20
15.5
140
45
101
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AO4588 Datasheet

30V N-Channel MOSFET

No Preview Available !

AO4588 pdf
AO4588
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±16V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=16A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.3
140
36
1.85
3.95
6
4.9
85
0.7
1
5
10
2.4
4.8
7.3
6.2
1
4.5
V
µA
µA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1950
270
130
1.2
2445
390
220
2.4
2940
510
310
3.6
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
32 41 50 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
15 19 24 nC
7.2 nC
Qgd Gate Drain Charge
6.6 nC
tD(on)
Turn-On DelayTime
7 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
41.5 ns
tf Turn-Off Fall Time
10.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
17.5 22
ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
31 40 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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Part Number AO4588
Description 30V N-Channel MOSFET
Maker Freescale
Total Page 6 Pages
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