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Freescale Semiconductor Electronic Components Datasheet

AOB11S65 Datasheet

Power Transistor

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AOB11S65 pdf
AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor
General Description
The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
750V
45A
0.399
13.2nC
2.9µJ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT11S65/AOB11S65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
11
8
TC=25°C
Power Dissipation B Derate above 25oC
PD
198
1.6
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol AOT11S65/AOB11S65
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.63
AOTF11S65
650
±30
11*
8*
45
2
60
120
39
0.31
100
20
-55 to 150
300
AOTF11S65
65
--
3.25
AOTF11S65L
11*
8*
31
0.25
AOTF11S65L
65
--
4
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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Freescale Semiconductor Electronic Components Datasheet

AOB11S65 Datasheet

Power Transistor

No Preview Available !

AOB11S65 pdf
AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=150°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=5.5A, TJ=25°C
VGS=10V, ID=5.5A, TJ=150°C
VSD Diode Forward Voltage
IS=5.5A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
650 -
-
700 750
-
V
- -1
µA
- 10 -
- - ±100 nΑ
2.6 3.3
4
V
- 0.35 0.399
- 0.98 1.11
- 0.82 -
V
- - 11 A
- - 45 A
- 646 -
- 42 -
pF
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=5.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=5.5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=5.5A,dI/dt=100A/µs,VDS=400V
Irm
Peak Reverse Recovery Current
IF=5.5A,dI/dt=100A/µs,VDS=400V
Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
- 33 -
- 117 -
- 1.1 -
- 18 -
- 13.2 -
- 3.2 -
- 4.3 -
- 25 -
- 20 -
- 77 -
- 19 -
- 278 -
- 22 -
- 4.2 -
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
2/7
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Part Number AOB11S65
Description Power Transistor
Maker Freescale
Total Page 7 Pages
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