http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Freescale Semiconductor Electronic Components Datasheet

AOT210L Datasheet

30V N-Channel MOSFET

No Preview Available !

AOT210L pdf
AOT210L/AOB210L
30V N-Channel MOSFET
General Description
The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power losses are minimized due to an extremely low combination
of RDS(ON) and Crss.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
105A
< 2.9m
< 3.7m
(< 2.6m)
(< 3.5m)
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
105
82
400
20
16
68
231
176
88
1.9
1.2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
54
0.7
Max
15
65
0.85
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6 www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Freescale Semiconductor Electronic Components Datasheet

AOT210L Datasheet

30V N-Channel MOSFET

No Preview Available !

AOT210L pdf
AOT210L/AOB210L
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
TJ=55°C
1
5
µA
VDS=0V, VGS= ±20V
100 nA
VDS=VGS ID=250µA
1 1.7 2.2 V
VGS=10V, VDS=5V
400
A
VGS=10V, ID=20A
2.4 2.9
TO220
TJ=125°C
3.7 4.7
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
TO220
VGS=10V, ID=20A
TO263
3 3.7 m
2.1 2.6
VGS=4.5V, ID=20A
TO263
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
2.7
78
0.65
3.5
1
105
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2800
920
50
0.5
3520
1320
90
1
4300
1720
120
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
39 48 58 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
17 22 27 nC
7 9 11 nC
Qgd Gate Drain Charge
4 7 10 nC
tD(on)
Turn-On DelayTime
11 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=0.75,
RGEN=3
10
38
ns
ns
tf Turn-Off Fall Time
11 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
14 21 28 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40 58 76 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AOT210L
Description 30V N-Channel MOSFET
Maker Freescale
Total Page 6 Pages
PDF Download
AOT210L pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 AOT210L 30V N-Channel MOSFET Freescale
Freescale
AOT210L pdf
2 AOT210L 30V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOT210L pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components