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MRF6P3300HR5 Datasheet

(MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor

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MRF6P3300HR5 pdf
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common - source amplifier
applications in 32 volt analog or digital television transmitter equipment.
Typical Narrowband Two - Tone Performance
IDQPo=w1e6r0G0aminA—, P2ou0t.2=
270
dB
Watts
PEP
@
860
MHz:
VDD
=
32
Volts,
Drain Efficiency — 44.1%
IMD — - 30.8 dBc
Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD =
32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM
Power Gain — 20.4 dB
Drain Efficiency — 29%
ACPR @ 3.9 MHz Offset — - 57 dBc @ 20 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Designed for Push - Pull Operation Only
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μNominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Document Number: MRF6P3300H
Rev. 1, 5/2006
MRF6P3300HR3
MRF6P3300HR5
470 - 860 MHz, 300 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 375G - 04, STYLE 1
NI - 860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
761
4.3
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
RθJC
0.23
0.24
0.27
0.27
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
1


Freescale Semiconductor Electronic Components Datasheet

MRF6P3300HR5 Datasheet

(MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor

No Preview Available !

MRF6P3300HR5 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 350 μAdc)
VGS(th)
1
2.2
3
Gate Quiescent Voltage
(VDS = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
0.22 0.3
Forward Transconductance
(VDS = 10 Vdc, ID = 2.4 Adc)
gfs — 7.4 —
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.4 —
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Gps 19 20.2 23
Drain Efficiency
ηD 41 44.1 —
Intermodulation Distortion
IMD
- 30.8
- 28
Input Return Loss
IRL — - 24 - 9
Pout @ 1 dB Compression Point, CW
(f = 860 MHz)
P1dB
320
1. Each side of the device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
4. Drains are tied together internally as this is a total device value.
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
S
pF
dB
%
dBc
dB
W
MRF6P3300HR3 MRF6P3300HR5
2
RF Device Data
Freescale Semiconductor


Part Number MRF6P3300HR5
Description (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor
Maker Freescale Semiconductor
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1 MRF6P3300HR3 (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor Freescale Semiconductor
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2 MRF6P3300HR5 (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor Freescale Semiconductor
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