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Freescale Semiconductor Electronic Components Datasheet

MRF8P26080HR3 Datasheet

RF Power Field Effect Transistors

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MRF8P26080HR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ
Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =
7.5 dB @ 0.01% Probability on CCDF.
Frequency
2570 MHz
2595 MHz
2620 MHz
Gps
(dB)
15.4
15.2
15.0
ηD Output PAR ACPR
(%)
(dB)
(dBc)
39.1 6.8 --33.6
38.2 6.8 --36.0
36.9 6.8 --40.0
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point 83 Watts CW
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
Document Number: MRF8P26080H
Rev. 0, 12/2010
MRF8P26080HR3
MRF8P26080HSR3
2500--2700 MHz, 14 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P26080HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P26080HSR3
RFinA/VGSA 3
RFinB/VGSB 4
1 RFoutA/VDSA
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
VDD
Tstg
TC
TJ
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
140
1.26
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF8P26080HR3 Datasheet

RF Power Field Effect Transistors

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MRF8P26080HR3 pdf
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77°C, 14 W CW, 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2620 MHz
Case Temperature 90°C, 80 W CW(3), 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2620 MHz
Table 3. ESD Protection Characteristics
RθJC
°C/W
0.88
0.56
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics (4)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 75 μAdc)
VGS(th)
1.0
1.8
2.5 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 300 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4 Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.75 Adc)
VDS(on)
0.1
0.23
0.3
Vdc
Functional Tests (5,6) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc,
Pout = 14 W Avg., f = 2620 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured on 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 13.8 15.0 16.8 dB
Drain Efficiency
ηD 34.0 36.9 —
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR 6.4 6.8 — dB
Adjacent Channel Power Ratio
ACPR
--40.0
--33.0
dBc
Typical Broadband Performance (6) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA,
VGSB = 1.3 Vdc, Pout = 14 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
Output PAR
ACPR
(%)
(dB)
(dBc)
2570 MHz
15.4 39.1
6.8 --33.6
2595 MHz
15.2 38.2
6.8 --36.0
2620 MHz
15.0 36.9
6.8 --40.0
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P26080HR3 MRF8P26080HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF8P26080HR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
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