ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
55
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.06
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V VDS=VGS, ID=1mA
Forward Transconductance
gfs - 600 - mS VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS - - 10 uA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=55V, VGS=0
- 100 uA VDS=40V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-2
VGS=10V, ID=500mA
-4
VGS=4.5V, ID=500mA
1 1.6
ID=600mA
0.5 - nC VDS=50V
0.5 -
VGS=4.5V
12 -
VDS=30V
10 -
ID=600mA
56
-
ns VGS=10V
RG=3.3
29 -
RD=52
32 50
VGS=0V
8 - pF VDS=25V
6-
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.2 V IS=200mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
/W when mounted on Min. copper pad.
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