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HI-SINCERITY
HI-SINCERITY

HT666 Datasheet Preview

HT666 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

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HT666 pdf
HI-SINCERITY
MICROELECTRONICS CORP.
HT666
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6464
Issued Date : 1993.09.07
Revised Date : 2005.02.15
Page No. : 1/4
Description
The HT666 is designed for general purpose amplifier and high-speed,medium-
power switching applications.
Features
High Frequency Current Gain
High Speed Switching Transistor
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage......................................................................................................................... 75 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current ........................................................................................................................................ 600 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Min. Typ. Max.
75 -
-
40 -
-
6- -
- - 10
- - 10
- - 50
- - 300
- -1
- - 1.2
- -2
35 -
-
50 -
-
75 -
-
100 300
40 -
-
50 -
-
300 -
-
HT666
Unit
V
V
V
nA
nA
nA
mV
V
V
V
-
-
-
-
-
-
MHz
Test Conditions
IC=10uA
IC=100mA
IE=10uA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=20mA, VCE=20V, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSMC Product Specification



HI-SINCERITY
HI-SINCERITY

HT666 Datasheet Preview

HT666 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

HT666 pdf
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6464
Issued Date : 1993.09.07
Revised Date : 2005.02.15
Page No. : 2/4
DC Current Gain
1000
Gain Bandwidth Product & Collector Current
10000
100 1000
10 100
1
1 10 100 1000
Collector current (mA)
Collector-Emitter Saturation Voltage
10.0
1.0
0.1
0.0
1
10 100
Collector Current (mA)
1000
Base-Emitter Saturation Voltage
10
10
1
10
Collector Current (mA)
100
Total Power Dissipation & Ambient
Temperature
800
600
400
200
0
0 25 50 75 100 125 150 175 200
Ta-Ambient Temperature
1
0.1
1
HT666
10 100
Collector current (mA)
1000
HSMC Product Specification


Part Number HT666
Description NPN EPITAXIAL PLANAR TRANSISTOR
Maker HI-SINCERITY
Total Page 4 Pages
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