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Hitachi Power Semiconductor Device Electronic Components Datasheet

D1135 Datasheet

2SD1135

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D1135 pdf
2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
100
80
5
4
8
40
150
–45 to +150
Unit
V
V
V
A
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

D1135 Datasheet

2SD1135

No Preview Available !

D1135 pdf
2SD1135
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO
voltage
80
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
I CBO
hFE1*1
hFE2
VBE
VCE(sat)
60
35
Gain bandwidth product
fT
— 10
Collector output capacitance Cob — 40
Notes: 1. The 2SD1135 is grouped by hFE1 as follows.
2. Pulse test.
Max
Unit
V
Test conditions
IC = 50 mA, RBE =
—V
IE = 10 µA, IC = 0
0.1 mA
200
1.5 V
2V
VCB = 80 V, IE = 0
VCE = 5 V, IC = 1 A*2
VCE = 5 V, IC = 0.1 A*2
VCE = 5 V, IC = 1 A*2
IC = 2 A, IB = 0.2 A*2
— MHz VCE = 5 V, IC = 0.5 A*2
— pF VCB = 20 V, IE = 0, f = 1 MHz
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
5
(10 V, 4 A)
IC max (Continuous)
2
1.0
(TCD=C2O5p°Cer)atio(3n 3 V, 1.2 A)
0.5
0.2
0.1
0.05
1
2
(80 V, 0.06 A)
5 10 20 50 100
Collector to emitter voltage VCE (V)
2


Part Number D1135
Description 2SD1135
Maker Hitachi
Total Page 5 Pages
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