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Hitachi Power Semiconductor Device Electronic Components Datasheet

D1113 Datasheet

2SD1113

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D1113 pdf
2SD1113(K)
Silicon NPN Triple Diffused
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Application
Igniter
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1
6 k
(Typ)
450
(Typ)
3
Ratings
300
300
7
6
10
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

D1113 Datasheet

2SD1113

No Preview Available !

D1113 pdf
2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
wEwmw.idttaetrastohebeat4sue.cbormeakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
Symbol
V(BR)CBO
VCEO(sus)
V(BR)EBO
I CEO
hFE
VCE(sat)
VBE(sat)
t on
t off
Min
300
300
7
500
Typ
2.0
23
Max Unit
500 V
—V
—V
100 µA
1.5 V
2.0 V
µs
µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB1 = –IB2 = 40 mA
IC = 4 A, IB1 = –IB2 = 40 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
50
iC (peak)
10
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
0.01
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2


Part Number D1113
Description 2SD1113
Maker Hitachi Semiconductor
Total Page 5 Pages
PDF Download
D1113 pdf
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