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Hitachi Power Semiconductor Device Electronic Components Datasheet

PF1010A Datasheet

MOS FET Power Amplifier Module

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PF1010A pdf
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PF1010A
MOS FET Power Amplifier Module for P/C LAN
Features
Frequency range: 806 to 824 MHz
Surface mounted small package: 1 cc, 3g with shielded cover
Loe voltage operation: 6 V
Low power control current: 300 µA Typ
Pin Arrangement
ADE-208-106A (Z)
2nd Edition
July 1996
RF-E
5
5
1 2534
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND


Hitachi Power Semiconductor Device Electronic Components Datasheet

PF1010A Datasheet

MOS FET Power Amplifier Module

No Preview Available !

PF1010A pdf
PF1010A
Internal Diagram and External Circuit
Pin1
Pin
Pin2
VAPC
Pin3
VDD
Pin4
Pout
Z1 C1 FB1
C3 C4
FB2 C2
Z2
Pin VAPC
VDD
C1 = C2 = 0.01 µF (Ceramic chip capacitor)
C3 = C4 = 4.7 µF (Tantalum)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 (Microstrip line)
Pout
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
APC voltage
Input power
Operating case temperature
Storage temperature
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Rating
12
2
3
20
–30 to +100
–30 to +100
Unit
V
A
V
mW
°C
°C
2


Part Number PF1010A
Description MOS FET Power Amplifier Module
Maker Hitachi Semiconductor
Total Page 13 Pages
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1 PF1010A MOS FET Power Amplifier Module Hitachi Semiconductor
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