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Hittite Microwave Corporation
Hittite Microwave Corporation

HMC-APH462 Datasheet Preview

HMC-APH462 Datasheet

GaAs HEMT MMIC 1 WATT POWER AMPLIFIER

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HMC-APH462 pdf
www.DataSheet4U.com
v03.0209
Typical Applications
This HMC-APH462 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT
• Military & Space
HMC-APH462
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 15 - 27 GHz
Features
Output IP3: +37 dBm
P1dB: +29 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.70 x 2.62 x 0.1 mm
Functional Diagram
General Description
The HMC-APH462 is a high dynamic range, two stage
GaAs HEMT MMIC 0.8 Watt Power Amplifier which
operates between 15 and 27 GHz. The HMC-APH462
provides 17 dB of gain, and an output power of +29
dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH462 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
Electrical Specifications[1]
TA = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA [2]
Parameter
Min.
Typ. Max. Min.
Typ. Max. Units
Frequency Range
15 - 17
17 - 27
GHz
Gain
12 16
13 17
dB
Input Return Loss
15 18 dB
Output Return Loss
15 18 dB
Output power for 1dB Compression (P1dB)
26
27 29
dBm
Output Third Order Intercept (IP3)
34 37
Supply Current (Idd1+Idd2 + Idd3 + Idd4)
1440
1440
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA
3 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com



Hittite Microwave Corporation
Hittite Microwave Corporation

HMC-APH462 Datasheet Preview

HMC-APH462 Datasheet

GaAs HEMT MMIC 1 WATT POWER AMPLIFIER

No Preview Available !

HMC-APH462 pdf
www.DataSheet4U.com
v03.0209
Fixtured Gain vs. Frequency
20
18
16
14
12
10
15 17 19 21 23 25 27
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
15 17 19 21 23 25
FREQUENCY (GHz)
27
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
Drain Bias Current (Idd1 + Idd4)
Drain Bias Current (Idd2 + Idd3)
RF Input Power
Thermal Resistance
(Channel to die bottom)
Storage Temperature
Channel Temperature
+5.5 Vdc
-1 to +0.3 Vdc
530 mA
1060 mA
18 dBm
20.5 °C/W
-65 to +150 °C
180 °C
HMC-APH462
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 15 - 27 GHz
Fixtured Pout vs. Frequency
40
36
32
28
IP3@18dBm/Tone
24 P3dB
P1dB
20
15 16 17 18 19 20 21 22 23 24 25 26 27
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
15 16 17 18 19 20 21 22 23 24 25 26 27
FREQUENCY (GHz)
3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 179


Part Number HMC-APH462
Description GaAs HEMT MMIC 1 WATT POWER AMPLIFIER
Maker Hittite Microwave Corporation
Total Page 6 Pages
PDF Download
HMC-APH462 pdf
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