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IXYS
IXYS

IXTA200N075T Datasheet Preview

IXTA200N075T Datasheet

Power MOSFET

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IXTA200N075T pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA200N075T
IXTP200N075T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
75
200
5.0
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 5
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
75 V
75 V
± 20
200
75
540
25
750
V
A
A
A
A
mJ
3 V/ns
430 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
4.2 5.0 m
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99521 (11/06)



IXYS
IXYS

IXTA200N075T Datasheet Preview

IXTA200N075T Datasheet

Power MOSFET

No Preview Available !

IXTA200N075T pdf
IXTA200N075T
IXTP200N075T
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
td(off) RG = 5 (External)
tf
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
RthCH
TO-220
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/µs
VR = 25 V, VGS = 0 V
Characteristic Values
Min. Typ. Max.
70 115
S
TO-263 (IXTA) Outline
6800
1040
190
pF
pF
pF
31 ns
57 ns
54 ns Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
52 ns
160
35
43
0.50
nC
nC
nC
0.35 °C/W
°C/W
Characteristic Values
Min. Typ. Max.
200 A
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
7.11
9.65
8.13
9.65
6.86
2.54
10.29
8.13
BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380
.270
.100
.405
.320
BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
.018 .029
540 A
TO-220 (IXTP) Outline
1.0 V
80 ns
Notes: 1. Pulse test, t 300 µs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585 7,005,734 B2
6,759,692 7,063,975 B2
6771478 B2 7,071,537


Part Number IXTA200N075T
Description Power MOSFET
Maker IXYS
Total Page 5 Pages
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