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R0577YC12E Datasheet Preview

R0577YC12E Datasheet

Distributed Gate Thyristor

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R0577YC12E pdf
Date:- 6 Nov, 2014
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R0577YC12x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200
1200
1200
1300
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
577
379
216
1169
946
6.0
6.6
180
218
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
kA2s
kA2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Type R0577YC12x Issue 2
Page 1 of 12
November, 2014



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R0577YC12E Datasheet

Distributed Gate Thyristor

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R0577YC12E pdf
Characteristics
Distributed Gate Thyristor R0577YS12x
VTM
V0
rs
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgt
tgd
Qrr
Qra
Irr
trr
PARAMETER
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
tq Turn-off time (note 2)
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
15
-
-
5.3
-
TYP. MAX. TEST CONDITIOYS (Note 1)
UNITS
- 2.15 ITM=1000A
V
- 1.51
V
- 0.64
m
- - VD=80% VDRM, linear ramp
V/s
- 60 Rated VDRM
mA
- 60 Rated VRRM
mA
- 3.0
Tj=25°C
- 200
VD=6V, IT=1A
V
mA
- 1000 Tj=25°C
mA
0.6 1.0 VD=67% VDRM, IT=1000A, di/dt=60A/µs,
1.2 2.0 IFG=2A, tr=0.5µs, Tj=25°C
150 -
µC
85 100
µC
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
60 -
A
2.5 -
µs
-
-
23
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
25
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.05 Double side cooled
K/W
- 0.10 Single side cooled
K/W
- 10.0
kN
90 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Introduction
The R0577 series of Distributed Gate Thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium frequency applications.
Data Sheet. Type R0577YC12x Issue 2
Page 2 of 12
November, 2014


Part Number R0577YC12E
Description Distributed Gate Thyristor
Maker IXYS
Total Page 12 Pages
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