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R1045NC32L Datasheet Preview

R1045NC32L Datasheet

Distributed Gate Thyristor

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R1045NC32L pdf
Date:- 17th October, 2016
Data Sheet Issue:- A1
Distributed Gate Thyristor
Types R1045NC28L & R1045NC32L
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (continuous), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
2800-3200
2800-3200
2800-3200
2900-3200
UNITS
V
V
V
V
MAXIMUM
LIMITS
1055
700
405
2125
1745
12.5
14.0
781×103
980×103
300
600
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 1 of 13
October 2016



IXYS
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R1045NC32L Datasheet Preview

R1045NC32L Datasheet

Distributed Gate Thyristor

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R1045NC32L pdf
Characteristics
Distributed Gate Thyristor types R1045NC28L & R1045NC32L
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.5 ITM=2000A
- 3.0 ITM=3150A
- 1.64
- 0.43
- - VD=80% VDRM, Linear ramp, Gate o/c
- 100 Rated VDRM
- 100 Rated VRRM
-3
Tj=25°C
- 300
VD=10V, IT=3A
- 0.25 Rated VDRM
- 1000 Tj=25°C
0.5 1.0 VD=67% VDRM, ITM=1000A, di/dt=10A/µs,
1.5 3.0 IFG=2A, tr=0.5µs, Tj=25°C
950 1100
460 - ITM=1000A, tp=1000µs, di/dt=60A/µs,
85 - Vr=50V
11 -
-
50
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
-
65
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.024 Double side cooled
- 0.048 Single side cooled
- 26
510 -
UNITS
V
V
V
m
V/s
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 2 of 13
October 2016


Part Number R1045NC32L
Description Distributed Gate Thyristor
Maker IXYS
Total Page 13 Pages
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R1045NC32L pdf
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