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T0258HF65G Datasheet Preview

T0258HF65G Datasheet

Insulated Gate Bi-Polar Transistor

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T0258HF65G pdf
Date:- 18 Feb, 2015
Data Sheet Issue:- A2
Advance data
Insulated Gate Bi-Polar Transistor
Type T0258HF65G
Absolute Maximum Ratings
VCES
VCES
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Collector – emitter voltage (Tj 25°C)
Collector – emitter voltage (Tj -40°C)
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
6500
6500
6000
3600
±20
UNITS
V
V
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 1000nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
258
516
258
516
2110
2320
3
1000
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
KW
A/µs
°C
°C
Provisional Data Sheet T0258HF65G Issue A2
Page 1 of 8
February, 2015



IXYS
IXYS

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T0258HF65G Datasheet

Insulated Gate Bi-Polar Transistor

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T0258HF65G pdf
Insulated Gate Bi-polar Transistor Type T0258HF65G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
4.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
3.6
4.8
5.2
2.5
-
45
1.7
3.5
1.5
1.8
5.0
2.2
2.5
1.45
1400
MAX
-
5.2
2.49
10.5
-
10
20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 258A, VGE = 15V, Tj = 25°C
IC = 258A, VGE = 15V
Current range: 86A – 258A
VCE = VGE, IC = 258mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 10V, VGE = 0V, f = 100kHz, Tj=25°C
IC =258A, VCE =3600V, di/dt=700A/µs
VGE = ±15V, Ls=1000nH
Rg(ON)= 12Ω, Rg(OFF)=36Ω, CGE=22nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=3600V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.1
3.45
-
-
300
410
1.2
0.6
MAX
-
3.85
1.89
7.6
-
-
-
-
TEST CONDITIONS
IF = 258A, Tj =25°C
IF = 258A
Current range 86A – 258A
Vr=3600V, IF = 258A, VGE = -15V,
di/dt=700A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
12
-
TYP
-
-
-
-
-
-
-
825
MAX
32.8
49.4
98
56.7
82
183
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Provisional Data Sheet T0258HF65G Issue A2
Page 2 of 8
February, 2015


Part Number T0258HF65G
Description Insulated Gate Bi-Polar Transistor
Maker IXYS
Total Page 8 Pages
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