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IXYS Corporation
IXYS Corporation

IXFT13N80Q Datasheet Preview

IXFT13N80Q Datasheet

HiPerFET Power MOSFETs Q Class

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IXFT13N80Q pdf
HiPerFETTM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
IXFH 13N80Q
IXFT 13N80Q
VDSS
ID25
RDS(on)
=
=
=
trr £ 250 ns
800 V
13 A
0.70 W
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
800 V
800 V
±20 V
±30 V
13 A
52 A
13 A
28 mJ
750 mJ
5 V/ns
250
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±20 VDC, VDS = 0
I
DSS
V =V
DS DSS
V =0V
GS
T=
J
25°C
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800 V
2.5 4.5 V
±100 nA
50 mA
1 mA
0.70 W
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD (IXFH)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98626 (6/99)
1-2



IXYS Corporation
IXYS Corporation

IXFT13N80Q Datasheet Preview

IXFT13N80Q Datasheet

HiPerFET Power MOSFETs Q Class

No Preview Available !

IXFT13N80Q pdf
IXFH 13N80Q
IXFT 13N80Q
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 3.2 W (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
8 13
S
3250
310
60
pF
pF
pF
23 ns
36 ns
55 ns
19 ns
90 nC
20 nC
30 nC
0.42 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
13 A
52 A
1.5 V
t
rr
QRM IF = IS, -di/dt = 100 A/ms, VR = 100 V
IRM
250 ns
0.8 mC
7.5 A
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IXFT13N80Q
Description HiPerFET Power MOSFETs Q Class
Maker IXYS Corporation
Total Page 2 Pages
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