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IXYS Corporation
IXYS Corporation

IXTV230N085TS Datasheet Preview

IXTV230N085TS Datasheet

Power MOSFET

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IXTV230N085TS pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTV230N085T
IXTV230N085TS
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
85
230
4.4
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 3.3
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Maximum Ratings
85 V
85 V
PLUS220 (IXTV)
± 20
230
75
520
V
A
G DS
A PLUS220SMD (IXTV_S)
A
D (TAB)
40 A
1.0 J
3
550
-55 ... +175
175
-55 ... +175
300
260
11...65 /2.5...15
3
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
3.7 4.4 m
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99705(11/06)



IXYS Corporation
IXYS Corporation

IXTV230N085TS Datasheet Preview

IXTV230N085TS Datasheet

Power MOSFET

No Preview Available !

IXTV230N085TS pdf
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
RG = 3.3 (External)
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
RthCS
PLUS220
Characteristic Values
Min. Typ. Max.
75 125
S
9900
1230
286
pF
pF
pF
32 ns
49 ns
56 ns
39 ns
187 nC
51 nC
55 nC
0.25
0.27 °C/W
°C/W
IXTV230N085T
IXTV230N085TS
PLUS220 (IXTV) Outline
Terminals:
1 - Gate
3 - Source
2 - Drain
Tab - Drain
Source-Drain Diode
Symbol
Values
Test Conditions
(TJ = 25° C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 50 A, VGS = 0 V, Note 1
trr IF = 50 A, -di/dt = 100 A/µs
VR = 25 V, VGS = 0 V
Characteristic
Min. Typ. Max.
230 A
520 A
1.0 V
90 ns
PLUS220SMD (IXTV_S) Outline
Note 1. Pulse test, t 300 µs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location is 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106
5,049,961
5,063,307
5,034,796
5,237,481
5,381,025
5,187,117
6,162,665
6,259,123B1
5,486,715
6,404,065B1
6,534,343
6,306,728B1
6,683,344
6,710,405B2
6,583,505
6,727,585
6,759,692
6,710,463
7,005,734B2 7,063,975B2
7,063,975B2 7,071,537
6,771,478B2 7,071,537


Part Number IXTV230N085TS
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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