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60NF06 Datasheet Preview

60NF06 Datasheet

N-Channel MOSFET Transistor

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60NF06 pdf
INCHANGE Semiconductor
wiswwc.DaNtaS-hCeeht4Ua.cnomnel MOSFET Transistor
isc Product Specification
60NF06
FEATURES
·Drain Current –ID=60A@ TC=25
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.016Ω(Max)
·Fast Switching
DESCRIPTION
Suitable as primary switch in advanced high-efficiency isolated
DC-DC converters for Telecom and Computer application. It is
also intended for any application with low gate charge drive
requirements .
APPLICATIONS
·High-efficiency DC-DC converters
·UPS and motor control
·Automotive
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
±20
V
V
ID Drain Current-Continuous
60 A
IDM Drain Current-Single Pluse (tp10μs)
240
A
PD Total Dissipation @TC=25
110 W
TJ Max. Operating Junction Temperature
175
Tstg Storage Temperature
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.36
62.5
UNIT
/W
/W
isc Websitewww.iscsemi.cn



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60NF06 Datasheet Preview

60NF06 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

60NF06 pdf
INCHANGE Semiconductor
wiswwc.DaNtaS-hCeeht4Ua.cnomnel MOSFET Transistor
isc Product Specification
60NF06
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 30A
VGS= ±20V;VDS= 0
VDS= 60V; VGS=0
VDS= 60V; VGS=0; Tj= 125
IS= 60A; VGS=0
MIN MAX UNIT
60 V
24V
0.016
Ω
±100
nA
1
10
μA
1.3 V
·
isc Websitewww.iscsemi.cn


Part Number 60NF06
Description N-Channel MOSFET Transistor
Maker Inchange
Total Page 2 Pages
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