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Inchange Semiconductor
Inchange Semiconductor

2SD1044 Datasheet Preview

2SD1044 Datasheet

Silicon NPN Darlington Power Transistor

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2SD1044 pdf
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1044
DESCRIPTION
·High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100 V
VCER Collector-Emitter Voltage
100 V
VCEO Collector-Emitter Voltage
80 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
6A
IBB Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
3A
60 W
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/



Inchange Semiconductor
Inchange Semiconductor

2SD1044 Datasheet Preview

2SD1044 Datasheet

Silicon NPN Darlington Power Transistor

No Preview Available !

2SD1044 pdf
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1044
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCER
Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB=B 30mA
ICBO Collector Cutoff current
VCB= 100V, IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
hFE DC Current Gain
IC= 1A; VCE= 4V
MIN TYP. MAX UNIT
100 V
80 V
1.7 V
10 μA
10 mA
700 10000
‹ hFE classifications
QP
O
700-2500 2000-5000 4000-10000
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/


Part Number 2SD1044
Description Silicon NPN Darlington Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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