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Infineon Technologies Electronic Components Datasheet

IPD50N06S3-15 Datasheet

Power Transistor

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IPD50N06S3-15 pdf
OptiMOS®-T Power-Transistor
Features
• N-channel - Normal Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD50N06S3-15
Product Summary
V DS
R DS(on),max
ID
55 V
15 m
50 A
PG-TO252-3-11
Type
IPD50N06S3-15
Package
Marking
PG-TO252-3-11 3N0615
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
I D,pulse
E AS
I AS
T C=25 °C
I D=25 A
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
35
200
130
50
±20
65
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.2
page 1
2009-05-20


Infineon Technologies Electronic Components Datasheet

IPD50N06S3-15 Datasheet

Power Transistor

No Preview Available !

IPD50N06S3-15 pdf
IPD50N06S3-15
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
min.
Values
typ.
Unit
max.
- - 2.3 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=30 µA 2.1 3.0
-V
4
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=55 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=25 A
-
-
-
1 100
1 100 nA
13 15 m
Rev. 1.2
page 2
2009-05-20


Part Number IPD50N06S3-15
Description Power Transistor
Maker Infineon
Total Page 9 Pages
PDF Download
IPD50N06S3-15 pdf
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