http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Infineon Technologies Electronic Components Datasheet

K03H1202 Datasheet

IGBT

No Preview Available !

K03H1202 pdf
IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled
HE diode
C
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- Eoff optimized for IC =3A
G
E
PG-TO220-3-31
(FullPAK)
PG-TO220-3-34
(FullPAK)
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKA03N120H2
IKA03N120H2
VCE
1200V
1200V
IC
3A
3A
Eoff
0.15mJ
0.15mJ
Tj
150C
150C
Marking
Package
K03H1202 PG-TO-220-3-31
K03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (VGE = 15V)
TC = 100C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Gate-emitter voltage
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Isolation Voltage
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Visol
Value
1200
8.2
9
9
Unit
V
A
9.6
3.9
20
29
-40...+150
260
2500
V
W
C
Vrms
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 17.07.2013


Infineon Technologies Electronic Components Datasheet

K03H1202 Datasheet

IGBT

No Preview Available !

K03H1202 pdf
IKA03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
4.3
5.8
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=300A
VGE = 15V, IC=3A
Tj=25C
Tj=150C
VGE = 10V, IC=3A,
Tj=25C
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
VF
VGE(th)
ICES
IGES
gfs
VGE = 0, IF=3A
Tj=25C
Tj=150C
IC=90A,VCE=VGE
VCE=1200V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=3A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
min.
1200
-
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
1.55 -
1.6 -
3 3.9
A
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
8.6 - nC
7 - nH
Power Semiconductors
2
Rev. 2.3 17.07.2013


Part Number K03H1202
Description IGBT
Maker Infineon
Total Page 14 Pages
PDF Download
K03H1202 pdf
Download PDF File
K03H1202 pdf
View for Mobile






Related Datasheet

1 K03H1202 IGBT Infineon
Infineon
K03H1202 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components